Maximum Ratings | ||||
Parameters | Symbol | Test Conditions | Values | Unit |
Average On-State Current | ITAV | Sine 180℃;TC=85℃ | 600 | A |
Surge forward current | ITSM | t=10ms TJ=25℃ | 19500 | A |
Maximum I2t for fusing | I2t | t=10ms TJ=25℃ | 1901250 | A2s |
Isolation Breakdown Voltage(R.M.S) |
Visol | AC 50HZ ; R.M.S.; 1min | 2500 | V |
Ac.50HZ ;R.M.S ;1sec | 3500 | V | ||
Operating Juntion Temperature | TJ | -40~+125 | ℃ | |
Storage Temperature | Tstg | -40~+125 | ℃ | |
Mounting Torque | Mt | To terminals(M10) | 12±10% |
Nm |
Ms | To heatsink(M6) | 6±10% | ||
Maximum non-repetitive rate of rise of turned on current |
di/dt | TJ=125℃ from 0.67VDRM , ITM=π × IT(AV) ,Ig=500mA tr<0.5us tp>6us |
200 |
A/us |
Maximum critical rate of rise of off-state voltage | dv/dt | TJ =125℃,VD=2/3VDRM | 1000 | V/us |
Electrical Characteristics | ||||||
Parameters |
Symbol |
Test Conditions | Values |
Unit | ||
Min. | Typ. | Max. | ||||
Maximum Peak On-State Voltage | VTM | ITM =π × IT(AV), TJ=25℃ | 1.6 | V | ||
Maximum Repetitive Peak Reverse Current/ Maximum Repetitive Off-state Current |
IRRM/ IDRM |
TJ=125℃ VRD=VRRM |
30 |
mA | ||
Maximum gate voltage required to trigger | VGT | TJ=25℃ , VD=6V | 3.0 | V | ||
Maximum gate current required to trigger | IGT | TJ=25℃ , VD=6V | 200 | mA | ||
Maximum Latching current | IL | TJ=25℃ , IG=1.2IGT | 1500 | mA | ||
Maximum Holding current | IH | TJ=25℃ , IT=1A | 400 | mA | ||
Gate non-trigger voltage | VGD | VD=0.67VDRM | 0.2 | V | ||
Gate peak power | P
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