Thyristor Modules,JKT601/JKH601 Series,High Power Products

Maximum Ratings

Parameters

Symbol

Test Conditions

Values

Unit

Average On-State Current

ITAV

Sine 180;TC=85

600

A

Surge forward current

ITSM

t=10ms TJ=25

19500

A

Maximum    I2t   for fusing

I2t

t=10ms TJ=25

1901250

A2s

Isolation                           Breakdown

Voltage(R.M.S)

 

Visol

AC 50HZ ; R.M.S.; 1min

2500

V



Ac.50HZ R.M.S 1sec

3500

V

Operating Juntion Temperature

TJ


-40~+125

Storage Temperature

Tstg


-40~+125

 

Mounting Torque

Mt

To terminals(M10)

12±10%

 

Nm


Ms

To heatsink(M6)

6±10%


Maximum non-repetitive rate of rise of turned on current

 

di/dt

TJ=125from 0.67VDRM  ,

ITM × IT(AV)  ,Ig=500mA   tr<0.5us tp>6us

 

200

 

A/us

Maximum critical rate of rise of off-state voltage

dv/dt

TJ =125,VD=2/3VDRM

1000

V/us

Electrical Characteristics

 

Parameters

 

Symbol

 

Test Conditions

Values

 

Unit

Min.

Typ.

Max.

Maximum Peak On-State Voltage

VTM

ITM   × IT(AV), TJ=25



1.6

V

Maximum Repetitive Peak Reverse Current/ Maximum Repetitive

Off-state Current

 

IRRM/ IDRM

 

TJ=125VRD=VRRM



 

30

 

mA

Maximum gate voltage required to trigger

VGT

TJ=25 , VD=6V



3.0

V

Maximum gate current required to trigger

IGT

TJ=25 , VD=6V



200

mA

Maximum Latching current

IL

TJ=25 , IG=1.2IGT



1500

mA

Maximum Holding current

IH

TJ=25 , IT=1A



400

mA

Gate non-trigger voltage

VGD

VD=0.67VDRM

0.2



V

Gate peak power

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