Samsung K4ABG165WB-MCWE DDR4 32G DRAM memory chip

An evolution in performance

• Increased bandwidth, up to 3,200 Mbps

• Easily processing massive workloads with enhanced speed,
  the DDR4 transfers more data faster than ever before,
  offering 4 bank groups (total 16 banks) to reduce interleaving
  delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.

Less energy,
greater efficiency

• Advanced process technology
  Reduce core and on/off power

• Samsung’s industry-first 1x nm process technology enables DDR4
  to consume less power while boosting performance, reducing TCO.
  The 1.2V low operating voltage and Pseudo Open Drain (POD)
  interface enables lower power consumption, using 25% less energy.

Improved reliability

• Safe CRC transmission
  Parity bit to prevent errors

• System reliability is ever more critical as data centers process ever
  more traffic. Advanced features of the Samsung DDR4 ensure
  superior data transmission, including Write CRC to help recognize
  multibit failures and parity checks for CMD/ADD to prevent system
  malfunctions